Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters |
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| Affiliation: | 1. College of Physics, Qingdao University, Qingdao 266071, China;2. College of Electronic & Information Engineering, Qingdao University, Qingdao 266071, China;3. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;4. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;3. Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal;1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, China;2. Department of Material Science and Engineering, Qilu University of Technology, Jinan 250353, China;1. Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China;2. Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China;3. Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, China |
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| Abstract: | High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytterbium oxide (Yb2O3) thin films were fabricated by spin coating and their applications in TFTs were explored. The physical properties of the solution-processed Yb2O3 thin films processed at different annealing temperatures were systematically investigated using various characterization techniques. To explore the feasibility of the Yb2O3 thin films as gate dielectrics for oxide TFTs, In2O3 TFTs based on Yb2O3 dielectrics were integrated. All the devices could be operated at 3 V, which is critical for the applications in portable, battery-driven, and low-power electronic devices. The optimized In2O3/Yb2O3 TFT exhibits high electrical performances, including field-effect mobility of 4.98 cm2/V s, on/off current ratio of ~ 106, turn-on voltage around 0 V, and subthreshold swing of 70 mV/decade, respectively. To demonstrate the potential of In2O3/Yb2O3 TFT toward more complex logic application, the unipolar inverter was further constructed. |
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| Keywords: | Solution process High-k dielectric Low-voltage operation Thin-film transistor Inverter |
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