Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling |
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Authors: | S H Park Markarian M PKL Yu P M Asbeck |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of California, 93106 San Diego, CA |
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Abstract: | The conduction band alignment of compressively strained In1−xGaxP relative to lattice matched InGaP/GaAs has been determined by capacitance-voltage profil-ing. A modified version of Kroemer’s
capacitance-voltage profiling method is developed wherein a quantum well is profiled instead of a single heterojunction. A
one-dimensional Poisson-Schrodinger solver was used to fit the reconstructed carrier profiles corresponding to a value of
ΔEc at varying temperatures. Schottky barrier diode structures containing a single strained InGaP quantum well were grown by
low pressure metalorganic chemical vapor deposition. The two strained compositions studied contained 35 and 31% gallium. Conduction
band offsets of 101 and 131 meV were found for the 35 and 31% samples, respectively, with an estimated accuracy of ±5 meV.
These results agreed closely with values predicted by empirical calculations. |
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Keywords: | Capacitance-voltage (C-V) profiling conduction band offset GaInP strained quantum well |
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