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Effect of surfactant on removal of particle contamination on Si wafers in ULSI
作者姓名:檀柏梅  李薇薇  牛新环  王胜利  刘玉岭
作者单位:Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
摘    要:

关 键 词:ULSI  硅晶片  粒子污染  表面活性剂  粒子去除  兆声清洗技术
收稿时间:2006-04-10
修稿时间:2006-04-25

Effect of surfactant on removal of particle contamination on Si wafers in ULSI
TAN Bai-mei, LI Wei-wei, NIU Xin-huan, WANG Sheng-li, LIU Yu-ling.Effect of surfactant on removal of particle contamination on Si wafers in ULSI[J].Transactions of Nonferrous Metals Society of China,2006,16(B01):195-198.
Authors:TAN Bai-mei  LI Wei-wei  NIU Xin-huan  WANG Sheng-li  LIU Yu-ling
Affiliation:1. Tokyo Electron Limited, Tokyo, Japan;2. DuPont EKC, Fremont, CA, United States;3. Cameo Consulting, San Jose, CA, United States
Abstract:The adsorption mechanism of particle on the surface of silicon wafer after polishing or grinding whose surface force field is very strong was discussed, and the removal method of particle was studied. Particle is deposited on the wafer surface by interactions, mainly including the Van der Waals forces and static forces. In order to suppress particles depositing on the wafer surface, it is essential that the wafer surface and the particles should have the same polarity of the zeta potential. According to colloid chemistry and lots of experiments, this can be achieved by adding surfactants. Nonionic complex surfactant was used as megasonic cleaning solution, and the adsorptive state of particle on Si wafers was effectively controlled. The efficiency and effect of megasonic particle removal is greatly improved. A perfect result is also obtained in wafer cleaning.
Keywords:megasonic cleaning  nonionic surfactant  particle removal  silicon wafer  adsorption
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