| 金属氧化物掺杂调控空穴迁移特性构建高效率低电压OLED |
| |
| 引用本文： | 张小文,刘心宇. 金属氧化物掺杂调控空穴迁移特性构建高效率低电压OLED[J]. 电工材料, 2014, 0(1): 19-21,26 |
| |
| 作者姓名： | 张小文 刘心宇 |
| |
| 作者单位： | [1]桂林电子科技大学 广西信息材料重点实验室,广西桂林541004 [2]中南大学材料科学与工程学院,长沙410083 |
| |
| 摘 要： | 采用金属氧化物掺杂的双空穴传输层[NPB:5%MoOx]/[NPB:3%TiO2]构建了高效率低电压有机电致发光器件(OLED)。以Alq3为发光层,器件的最大发光效率和功率效率分别达到了5.1 cd/A和2.7 lm/W,比非掺杂型NPB空穴传输层构建的OLED分别提高了46%和93%,而驱动电压则降低了约1.5 V。这是由于掺杂型双空穴传输层能有效调控空穴迁移特性,改善电荷平衡因子,从而促进了发光效率和功率效率的提高。
|
| 关 键 词： | 空穴迁移率 掺杂 载流子平衡 |
Highly-efficient Low-voltage OLED Built by Controlling Hole-transport Characteristics With Metal-oxide Dopants |
| |
| ZHANG Xiao-wen,LIU Xin-yu. Highly-efficient Low-voltage OLED Built by Controlling Hole-transport Characteristics With Metal-oxide Dopants[J]. Electrical Engineering Materials, 2014, 0(1): 19-21,26 |
| |
| Authors: | ZHANG Xiao-wen LIU Xin-yu |
| |
| Affiliation: | 1. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology,Guangxi Guilin, 541004, China; 2. College of Materials Science and Engineering, Central SouthUniversity, Changsha 410083, China) |
| |
| Abstract: | A highly-efficient low-voltage organic light-emitting device（OLED） was built by using metal-oxide-doped dual hole-transport layer of [NPB：5%MoOx]/[NPB：3%TiO2]. With Alq3 as the emitting layer, the device shows the maximum luminous efficiency and power efficiency of 5.1 cd/A and 2.7 lm/W, which have been enhanced by 46% and 93% respectively in comparison with the device using conventional NPB hole-transport layer. The reduction of driving voltage of about 1.5 V is also observed in the OLED with dual hole-transport layer. The dual hole-transport layer adjusts hole-transport characteristics, which contributes to the reduction of driving voltage and the improvement of carrier balance. Consequently, the efficiencies are significantly improved. |
| |
| Keywords: | OLED OLED hole mobility dopant carrier balance |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
