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Intense white photoluminescence in ZnO thin film formed by anodization |
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| Authors: | Hidehito Nanto Tadatsugu Minami Shinzo Takata |
| Affiliation: | 1. Departments of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Oogigaoka, Nonoichimachi, PO Kanazawa-South, 921, Ishikawa, Japan 2. Departments of Electronics Engineering, Kanazawa Institute of Technology, 7-1 Oogigaoka, Nonoichimachi, PO Kanazawa-South, 921, Ishikawa, Japan |
| Abstract: | Intense white photoluminescence (PL) at room temperature has been observed in ZnO thin films formed by anodization at 26? C. The PL depends on the preparation conditions of the films. The PL is attributed to radiative recombination between localized electrons and holes in gap states which are formed by native defects in the films. We suggest that the anodized ZnO films might be useful for optoelectronic devices, since the low temperature anodization process used is inexpensive and fast. |
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