Impacts of gate structure on dynamic threshold SOI nMOSFETs |
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Authors: | Wen-Cheng Lo Sun-Jay Chang Chun-Yen Chang Tien-Sheng Cao |
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Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | The effects of different substrate-contact structures (T-gate and H-gate) dynamic threshold voltage silicon-on-insulator (SOI) nMOSFETs (DTMOS) have been investigated. It is found that H-gate structure devices have higher driving current than T-gate under DTMOS-mode operation. This is because H-gate SOI devices have larger body effect factor (/spl gamma/), inducing a lager reduction of threshold voltage. Besides, it is found that drain-induced-barrier-lowering (DIBL) is dramatically reduced for both T-gate and H-gate structure devices when devices are operated under DTMOS-mode. |
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