用快原子轰击质谱法研究Si_3N_4-GaAs薄膜的深度分布

利用快原子轰击质谱分析技术(FAB-MS)研究了Si_3N_4-GaAs薄膜的剖面分布.根据获得的硅离子电流纵向分布曲线,可以计算出Si_3N_4薄膜的厚度及观察过渡区的分布情况.还利用在不同质量处获得的离子电流曲线及相应于峰值的质谱图,研究了薄膜表面及界面的杂质沾污情况.FAB-MS有助于改进出Si_3N_4薄膜的生长工艺,特别是为原材料选择、清洗条件、腐蚀条件、沾污控制等提供了依据,从而生长出纯度和厚度符合要求的Si_3N_4薄膜.

Study of Depth-Profile of Silicon Nitride-Gallium Arsenide Wafer Using Fast Atom Bombardment-Mass Spectrometry

Fast atom bombardment-mass spectrometry(FAB-MS) is a new technique of mass spectrometric analysis, which was developed early in the 1980's. The FAB-MS has been successfully applied ia this paper to study the depth-profile of Si3N4-GaAs wafer. According to the silicon ioa current curve obtained from the bombardment of xeoa atoms beam, the thickness of Si3N4 layer can be estimated and the transition layer can be observed. This method has also been applied to study the impurities distribution both on the surface and in the matrix of the sample. FAB-MS is a very useful approach for improving the growth process of a silicon nitride film. This method provided a basis for selecting the raw materials, controlling the cleaning and etching conditions, and eliminating the contamination, so as to produce a good quality silicon nitride film. Besides, it is also of some help to investigate the crystallographic structure and to improve the characteristice for a variety of semiconductor materials.