Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers |
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Authors: | M PéRotin A Sabir L Gouskov H Luquet A Pérez B Canut B Lambert |
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Affiliation: | (1) CEM (UA391), U. Montpellier II, PI. E. Bataillon, 34095 Montpellier Cedex 05;(2) Dépt. Phys. Matér, (UA 172) U. Cl. Bernard, 69622 Villeurbanne Cedex;(3) Centre National des Télécommunications (CNET), 22301 Lannion Cedex, France |
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Abstract: | Implantation of Be+ ions into GaAISb epilayers is used to realize thep
+ layer of the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sbn
− /GaSbn
+ (1.55 /Μm) avalanche photodetector whose performances are detailed in Ref. (1). The GaAISb layers are grown using liquid
phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements.
The last part of this paper is devoted to the damaging level in the Be+-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from
the results that the Be+ ion implantation leads to a low damage level in this III-V compound. |
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Keywords: | Ga(Al)Sb Be+ implantation damage restoration |
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