| Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs |
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| 引用本文： | Yang Wei,Liu Xunchun,Zhu Min,Wang Runmei,Shen Huajun. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. 半导体学报, 2006, 27(5): 765-768 |
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| 作者姓名： | Yang Wei Liu Xunchun Zhu Min Wang Runmei Shen Huajun |
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| 作者单位： | 中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029 |
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| 基金项目： | 中国科学院知识创新工程项目 |
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| 摘 要： | 研究了薄基区HBT合金温度对残余电压Voffset和欧姆接触电阻Rcontact的影响,给出了薄基区HBT的最佳合金温度区域.用肖特基钳位理论解释了合金温度过高导致Voffset偏大的现象.从晶体管基本物理机制推导出Voffset与集电极、发射极面积比Ac/Ae的关系,并用此解释了U形发射极HBT具有较小Ac/Ae的原因,进一步证明了U型发射极结构的优越性.
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| 关 键 词： | 异质结双极型晶体管 U形发射极 合金 残余电压 heterojunction bipolar transistor U-shaped emitter alloy offset voltage 合金 温度 薄基区 InGaP GaAs 残余电压 欧姆接触 影响 Base Thin Contact Resistance Voltage Offset Temperature Dependence Alloy lower traditional strip emitter reason |
| 文章编号： | 0253-4177(2006)05-0765-04 |
| 收稿时间： | 2005-11-15 |
| 修稿时间： | 2005-11-15 |
Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs |
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| Yang Wei,Liu Xunchun,Zhu Min,Wang Runmei and Shen Huajun. Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs[J]. Chinese Journal of Semiconductors, 2006, 27(5): 765-768 |
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| Authors: | Yang Wei Liu Xunchun Zhu Min Wang Runmei Shen Huajun |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | The alloy temperature dependence of Voffset and Rcontact is studied,and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact is given for thin base HBTs.In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory.The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained. |
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| Keywords: | heterojunction bipolar transistor U-shaped emitter alloy offset voltage |
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