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HPM对军用电子设备的损伤机理分析
引用本文:陈卫,邓潘,程玉宝. HPM对军用电子设备的损伤机理分析[J]. 中国电子科学研究院学报, 2011, 6(5): 516-519
作者姓名:陈卫  邓潘  程玉宝
作者单位:脉冲功率激光技术国家重点实验室电子工程学院,合肥,230037
摘    要:针对HPM对军用电子设备的严重威胁,给出了HPM典型特征参数,重点分析了其对军用电子设备的损伤机理,包括HPM对电子设备的"前门"耦合效应、"后门"耦合效应,耦合能量的计算及损伤效应的分类,最后对军用电子设备的HPM防护给出了普适的防护措施。

关 键 词:HPM  耦合效应  损伤机理  防护

Analysis of Damage Mechanism of High Power Microwave on Military Electronic Equipments
CHEN Wei,,DENG Pan,CHENG Yu-bao,,Hefei ,China,.Electronical Engineering Institute of PLA,China). Analysis of Damage Mechanism of High Power Microwave on Military Electronic Equipments[J]. Journal of China Academy of Electronics and Information Technology, 2011, 6(5): 516-519
Authors:CHEN Wei    DENG Pan  CHENG Yu-bao    Hefei   China  .Electronical Engineering Institute of PLA  China)
Affiliation:CHEN Wei1,2,DENG Pan1,CHENG Yu-bao1,2(1.State Key Laboratory of Pulsed Power Laser Technology(Electronic Engineering Institute),Hefei 230037,China,2.Electronical Engineering Institute of PLA,China)
Abstract:For the serious threat that poses on military electronic equipments by high power microwave(HPM),representative characteristic parameters of HPM are given.The damage mechanism to military electronic equipments is mainly analysed,including the front door coupling effect,the back door coupling effect,the calculation of coupling energy and the sort of damage effect.At last,the general defense methods of military electronic equipments against HPM are proposed.
Keywords:HPM  coupling effect  damage mechanism  defense  
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