| 宽禁带半导体日盲紫外探测器研究进展 |
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| 引用本文： | 李长栋,韩慧伶. 宽禁带半导体日盲紫外探测器研究进展[J]. 光机电信息, 2009, 26(4): 24-28 |
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| 作者姓名： | 李长栋 韩慧伶 |
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| 作者单位： | 1. 中国人民解放军空军航空大学航空理论系飞行原理教研室,吉林,长春,130022
2. 中国人民解放军空军航空大学航空机械系飞机教研室,吉林,长春,130022 |
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| 摘 要： | 全固态日盲型紫外探测器具有体积小、功耗小和虚警率低等优点，在机载导弹预警方面具有广阔的应用前景。宽禁带半导体是这类探测器的首选材料，通过调节材料组分可以使响应波段落在日盲区。本文着重介绍以导弹预警为目的的宽禁带半导体紫外探测器的研究进展和前沿动态，分析了AlGaN、MgZnO等不同材料在制备和性能方面的优势和不足，并讨论了半导体日盲紫外探测器的发展方向。
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| 关 键 词： | 机载导弹预警 日盲紫外探测器 AlGaN MgZno |
Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors |
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| LI Chang-dong,HAN Hui-ling. Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors[J]. OME Information, 2009, 26(4): 24-28 |
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| Authors: | LI Chang-dong HAN Hui-ling |
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| Affiliation: | 1.Department of Aviation Theory;Aviation University of Airforce;Peoples Liberation Army;Changchun 130022;China;2. Department of Aeronautical and Mechanical Engineering;China |
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| Abstract: | Solid state solar-blind ultraviolet (UV) detectors have attracted more and more interests due to the appli- cations for airborne early-warning to missle. Compared to the other detection modes, solid state UV detection pos- sessed of many advantages, such as small size, low power dissipation, and low false alarm rate. Semiconductors with wide bandgap were good candidates for these detectors. The development of AlGaN and MgZnO based solar-blind UV detectors was introduced in the paper. The characteristics of ... |
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| Keywords: | AlGaN MgZnO |
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