Computational study of double-gate graphene nano-ribbon transistors |
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Authors: | Gengchiau Liang Neophytos Neophytou Mark S Lundstrom Dmitri E Nikonov |
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Affiliation: | (1) Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore;(2) School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907-1285, USA;(3) Technology and Manufacturing Group, Intel Corp., SC1-05, Santa Clara, CA 95052, USA |
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Abstract: | The ballistic performance of graphene nanoribbon (GNR) MOSFETs with different width of armchair GNRs is examined using a real-space
quantum simulator based on the Non-equilibrium Green’s Function (NEGF) approach, self-consistently coupled to a 3D Poisson’s
equation for electrostatics. GNR MOSFETs show promising device performance, in terms of low subthreshold swing and small drain-induced-barrier-lowing
due to their excellent electrostatics and gate control (single monolayer). However, the quantum tunneling effects play an
import role in the GNR device performance degradation for wider width GNR MOSFETs due to their reduced bandgap. At 2.2 nm
width, the OFF current performance is completely dominated by tunneling currents, making the OFF-state of the device difficult
to control. |
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Keywords: | MOSFETs Graphene nanoribbon Transistors NEGF Quantum tunneling |
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