Growth of semiconductor nanowires at large diffusion lengths |
| |
Authors: | V G Dubrovskii M V Nazarenko |
| |
Affiliation: | 1.Nanotechnology Research and Education Center, Russian Academy of Sciences,St. Petersburg Academic University,St. Petersburg,Russia;2.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
| |
Abstract: | A universal asymptotic expression for the law of nanowire (NW) growth in cases where the diffusion lengths for adatoms on
the substrate surface are much greater than the NW radius and the diffusion lengths for adatoms on the side surface of the
growing crystal are much greater than the NW length. The main stages of growth, which are characterized by different relations
between the NW length and its radius and the growth time, are determined. Possible asymptotic regimes of NW epitaxy are considered,
including the cases of exponential growth and limited growth to a certain critical thickness, which depend on the direction
of the diffusion flux of adatoms on the side surface of the growing crystal. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|