Effect of catalyst for nickel films for NiSi formation with improved interface roughness |
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Authors: | Hee-Sung KangJong-Bong Ha Jung-Hee LeeChi Kyu Choi Jeong Yong LeeKwang-Man Lee |
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Affiliation: | a School of Electronic Engineering & Computer Science, Kyungpook National University, Deagu 702-701, Republic of Koreab Samsung Advanced Institute of Technology, Yongin, Gyeonggi-Do, 446-712, Republic of Koreac Department of Physics, Jeju National University, Jeju 690-756, Republic of Koread Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Koreae Department of Electronic Engineering, Research Institute of Advanced Technology, Jeju National University, Jeju 690-756, Republic of Korea |
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Abstract: | Iodine is an effective catalyst to obtain homogeneous and smooth metal films with good interface properties. We adopted an iodine catalyst during the nickel film deposition by using atomic layer deposition (ALD) with bis(1-dimethylamino-2-methyl-2-butoxide)nickel Ni(dmamb)2] precursor and hydrogen reactant gas. The effect of iodine catalyst to nickel nucleation process was studied. The deposited films were silicided by rapid thermal process (RTP) which was performed by varying temperature from 400 °C to 900 °C in nitrogen ambient. The crystalline properties of nickel and nickel silicide films were examined by X-ray diffractometer (XRD) with various deposition temperatures. The interface properties and the surface morphology of nickel silicide films were studied by using Auger electron spectroscopy (AES) depth profile analyses and scanning electron microscopy (SEM). The experimental results showed that the iodine-catalyzed silicide film, which have a clean and smooth interface, exhibit lower resistivity, and lower leakage current density compared to that of non iodine-catalyzed films in implemented n+/p junction diode. |
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Keywords: | ALD Nickel silicide Catalyst Iodine XRD AES Leakage current |
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