Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors |
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Authors: | Dae-Ho SonDae-Hwan Kim Jung-Hye KimShi-Joon Sung Eun-Ae JungJin-Kyu Kang |
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Affiliation: | Public & Original Technology Research Center, Daegu Gyeongbuk Institute of Science & Technology, Daegu Technopark Venture 1, 711 Hosan-dong, Dalseo-gu 704-230, Republic of Korea |
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Abstract: | This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34 cm2 V−1 s−1, along with an on-off current ratio of 108 and a threshold voltage of 4.54 V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface. |
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Keywords: | Metal oxide thin film transistor HfInZnO High-k material |
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