Characterization of defects in gallium arsenide |
| |
Authors: | Vikram Kumar Y N Mohapatra |
| |
Affiliation: | (1) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India |
| |
Abstract: | It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities.
The characterization of these defects is important not only for better understanding of the solid state phenomena but also
for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide
for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence
etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal
impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide. |
| |
Keywords: | Gallium arsenide deep level transient spectroscopy semi-insulating gallium arsenide photoconductivity photo luminescence |
本文献已被 SpringerLink 等数据库收录! |
|