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高性能顶栅结构有机薄膜晶体管
引用本文:洪飞,谭莉,朱棋锋,向长江,韩学斌,张其国,郭晓东,申剑锋. 高性能顶栅结构有机薄膜晶体管[J]. 液晶与显示, 2012, 27(3): 313-317
作者姓名:洪飞  谭莉  朱棋锋  向长江  韩学斌  张其国  郭晓东  申剑锋
作者单位:中国科学院上海高等研究院新型显示技术研究中心,上海,201210
基金项目:上海市科委科研项目(No.10dz1100300)
摘    要:采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料,利用弱外延生长技术制备有机薄膜晶体管(OTFT)。在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型,发现两种不同结构的OTFT器件特性存在较大的差异,top-gate OTFT的迁移率比bottom-gate OTFT高很多。在顶栅结构的器件构型中获得了较高的器件特性参数,迁移率达到1.6cm2/V.s。研究了弱外延生长技术应用在两种不同器件构型中的差异,并解释了顶栅结构OTFT迁移率较高的原因。

关 键 词:有机薄膜晶体管  顶栅结构  弱外延  氧钒酞菁
收稿时间:2011-12-27

High Performance Organic Thin Film Transistor Based on Top-Gate Configuration
HONG Fei , TIAN Li , ZHU Qi-feng , XIANG Chang-jiang , HAN Xue-bin , ZHANG Qi-guo , GUO Xiao-dong , SHEN Jian-feng. High Performance Organic Thin Film Transistor Based on Top-Gate Configuration[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(3): 313-317
Authors:HONG Fei    TIAN Li    ZHU Qi-feng    XIANG Chang-jiang    HAN Xue-bin    ZHANG Qi-guo    GUO Xiao-dong    SHEN Jian-feng
Affiliation:(New Display Technology Research Center,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China,)
Abstract:Organic thin film transistors based on Weak Epitaxy Growth(WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations.The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine(VOPc).The two structural OTFTs are prepared under the same process conditions,and it is found that the device performance is different.The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT.A high mobility of 1.6 cm2/V·s is obtained in the top-gate structure.The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth(WEG) technology,and the reasons of higher mobility OTFT based on the top-gate configuration is explained.
Keywords:organic thin film transistor  top-gate configuration  weak epitaxy growth  VOPc
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