| Ca-B-Si掺杂对Ba(Mg_(1/3)Nb_(2/3))O_3陶瓷介电性能的影响 |
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| 引用本文： | 王冬梅,毛宏,吴孟强,张树人. Ca-B-Si掺杂对Ba(Mg_(1/3)Nb_(2/3))O_3陶瓷介电性能的影响[J]. 电子元件与材料, 2010, 29(1). DOI: 10.3969/j.issn.1001-2028.2010.01.007 |
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| 作者姓名： | 王冬梅 毛宏 吴孟强 张树人 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 四川省青年基金资助项目(No.JS0303001) |
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| 摘 要： | 采用传统电子陶瓷工艺合成了Ca-B-Si(CBS)玻璃掺杂的Ba(Mgl/3Nb2/3)O3微波介质陶瓷,研究了CBS掺杂量对陶瓷微波介电性能的影响。结果表明:CBS掺杂可促进陶瓷烧结并提高B位1:2有序度,进而降低微波介质损耗。当w(CBS)=3%时,陶瓷烧结温度由纯相时的1 500℃以上降至1 250℃,表观密度提高到6.32 g/cm3以上,陶瓷的微波介电性能达到最佳值:εr=26,Q.f=67 800 GHz(8 GHz),τf=25×10–6/℃。该陶瓷有望成为用于高频段微波器件的材料。
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| 关 键 词： | 微波介质陶瓷 Ba（Mgl/3Nb2/3）O3 Ca-B-Si掺杂 微波介质损耗 |
Effect of Ca-B-Si glass doping on the microwave dielectric properties of Ba(Mg_(1/3)Nb_(2/3))O_3 ceramics |
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| WANG Dongmei,MAO Hong,WU Mengqiang,ZHANG Shuren. Effect of Ca-B-Si glass doping on the microwave dielectric properties of Ba(Mg_(1/3)Nb_(2/3))O_3 ceramics[J]. Electronic Components & Materials, 2010, 29(1). DOI: 10.3969/j.issn.1001-2028.2010.01.007 |
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| Authors: | WANG Dongmei MAO Hong WU Mengqiang ZHANG Shuren |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China |
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| Abstract: | Ca-B-Si(CBS) glass doped Ba(Mgl/3Nb2/3)O3(BMN) microwave dielectric ceramics were prepared using the conventional electronic ceramic process.The effects of CBS doping amount on the microwave dielectric properties of BMN ceramics were studied.The results show that an improvement of sintering ability and 1:2 ordering degree of B-site is found in BMN ceramic,which results in the decreasing of microwave dielectric loss.In comparison with pure BMNceramics,the the BMN ceramic doped with 3%(mass fraction) CBS show... |
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| Keywords: | Ba(Mg_(1/3)Nb_(2/3))O_3 microwave dielectric ceramic Ba(Mg_(1/3)Nb_(2/3))O_3 Ca-B-Si doping microwave dielectric loss |
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