| 磁控溅射掺铒富硅氮化硅薄膜的光致荧光谱 |
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| 引用本文： | 丁武昌,左玉华,张云,郭剑川,成步文,余金中,王启明,郭亨群,吕蓬,申继伟. 磁控溅射掺铒富硅氮化硅薄膜的光致荧光谱[J]. 半导体学报, 2009, 30(10): 102001-4 |
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| 作者姓名： | 丁武昌 左玉华 张云 郭剑川 成步文 余金中 王启明 郭亨群 吕蓬 申继伟 |
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| 作者单位： | State;Laboratory;Integrated;Optoelectronics;Institute;Semiconductors;Chinese;Academy;Sciences;College;Information;Science;Engineering;Huaqiao;University; |
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| 摘 要： | Er-doped silicon-rich silicon nitride （SRN） films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er^3＋ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of thefilms, and possible excitation processes are discussed.
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| 关 键 词： | 氮化硅薄膜 光致发光光谱 磁控反应溅射 掺铒硅 硅纳米晶体 薄膜沉积 交通运输 高温退火 |
| 收稿时间： | 2009-03-05 |
| 修稿时间： | 2009-05-13 |
Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China;College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China;College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China |
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| Abstract: | Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er3+ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed. |
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| Keywords: | photoluminescence silicon nitride Er doping |
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