Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field |
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Authors: | M. Idrish Miah |
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Affiliation: | aNanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111, Australia;bSchool of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111, Australia;cDepartment of Physics, University of Chittagong, Chittagong 4331, Bangladesh |
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Abstract: | The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (VAH) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of VAH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that VAH depends on the doping density. The results are discussed. |
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Keywords: | Hall effect Spin transport Semiconductor |
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