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X-ray reflectivity analysis on initial stage of diamond-like carbon film deposition on Si substrate by RF plasma CVD and on removal of the sub-surface layer by oxygen plasma etching
Affiliation:1. Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan;2. Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan;1. Institute of Applied Physics and Mathematics, University of Pardubice, Studentska 95, 53210 Pardubice, Czech Republic;2. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Prague 8, Czech Republic;3. IMOMEC Division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B3590, Belgium
Abstract:The multi-layered structure of thin diamond-like carbon (DLC) films was investigated by X-ray reflectivity (XRR) analysis. Thin DLC films were deposited on Si substrate by RF plasma chemical vapor deposition (CVD) from acetylene source gas with short duration of plasma operation from 0.08 to 4.99 s. It was confirmed from XRR analysis that the thin DLC film on Si substrate had 3 layers consisting of a subsurface layer on the grown surface, a mixing layer at the interface to Si substrate, and a bulk-DLC layer sandwiched between the 2 layers. The 3 layers had been formed in 0.08 s at beginning of deposition with distinctive bulk-DLC layer of 1.7 nm thick already appeared due to extremely higher deposition rate only at the initial stage of CVD. The thickness of bulk-DLC layer increased with increasing CVD duration while both the mixing layer of higher density and the sub-surface layer of extremely low density continuously existed. By oxygen plasma etching, it was confirmed by XRR analysis that the sub-surface layer was clearly removed and another layer of lower density than the bulk DLC appeared.
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