Thermal analysis of submicron nanocrystalline diamond films |
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| Affiliation: | 1. Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany;2. Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom;3. Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;1. Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan;2. TOPLAS ENGINEERING Com., LTD, Ebisui Build. 1-9-9, Nishi-Tsutsujigaoka, Chofu 182-0006, Tokyo, Japan |
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| Abstract: | The thermal properties of sub-μm nanocrystalline diamond films in the range of 0.37–1.1 μm grown by hot filament CVD, initiated by bias enhanced nucleation on a nm-thin Si-nucleation layer on various substrates, have been characterized by scanning thermal microscopy. After coalescence, the films have been outgrown with a columnar grain structure. The results indicate that even in the sub-μm range, the average thermal conductivity of these NCD films approaches 400 W m− 1 K− 1. By patterning the films into membranes and step-like mesas, the lateral component and the vertical component of the thermal conductivity, klateral and kvertical, have been isolated showing an anisotropy between vertical conduction along the columns, with kvertical ≈ 1000 W m− 1 K− 1, and a weaker lateral conduction across the columns, with klateral ≈ 300 W m− 1 K− 1. |
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