Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2 |
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| Affiliation: | 1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan;2. Green Electronics Laboratories, Saga University, Saga, Japan;3. Graduate School of Electrical and Electronic Engineering, Saga University, Saga, 840-8502, Japan;1. Dept. of Electric Engineering and Electronics, Aoyama Gakuin University, Sagamihara 252-5258, Japan;2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, United States;2. Electrical and Computer Engineering, Michigan State University, East Lansing, MI, United States;3. Physics, Arizona State University, Tempe, AZ, United States;1. School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom;2. LSPM-CNRS, Université Paris 13, Villetaneuse 93430, France;3. Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086, Australia;1. Key Lab for Physical Electronics and Devices, Ministry of Education, Xi''an Jiaotong University, Xi''an 710049, PR China;2. Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi''an Jiaotong University, Xi''an 710049, PR China |
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| Abstract: | NO2 exposure drastically increases the hole concentration on the surface of hydrogen (H)-terminated diamond. When the NO2 gas concentration is higher than 300 ppm, the saturated hole sheet concentration ps stays the same. Therefore, the ps value is regarded as the high limit of the concentration of holes on H-terminated diamond surface, ps,max. In this work, we compared ps,max, mobility μ, and sheet resistance Rs for (100), (110), and (111) H-terminated surfaces of chemical-vapor-deposited single-crystal diamond. On (110), (111), (100) surfaces, the ps,max values are 1.717 × 1014 and 1.512 × 1014 cm? 2, and 0.981 × 1014, respectively. This result supports the first-principle calculations: the hole concentration depends on the energy difference between the valence band maximum and the unoccupied orbitals of adsorbent NO2 molecules. We have achieved Rs of 719.3 Ω/sq (ps = 1.456 × 1014 cm? 2 and μ = 59.6 cm2 V? 1 s? 1), the lowest reported so far, on (111) surfaces under 20,000-ppm NO2 atmosphere. |
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