Luminescence properties of CsI:Eu crystals |
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| Affiliation: | 1. Institute for Scintillation Materials, 60 Lenin Avenue, 61001 Kharkov, Ukraine;2. Universite Claude Bernard Lyon 1, 69622 Villeurbanne Cedex, France;1. New Industry Creation Hatchery Center (NICHe), Tohoku University, Japan;2. Institute for Materials Research, Tohoku University, Japan;3. C&A corporation, Japan;1. Faculty of Chemistry, Wroc?aw University of Technology, Wybrze?e Wyspiańskiego 27, 50-370 Wroc?aw, Poland;2. Wroc?aw University of Economics, Komandorska 118/120, 53-345 Wroc?aw, Poland;1. Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192, Japan;2. Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan |
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| Abstract: | The work is aimed to research of CsI:Eu single crystals’ luminescence at different excitations in the wide temperature range (from 8 to 300 K) and admixture concentration from 10?4% up to 10?1% of Eu2+ ions. This study was directed to separation of different luminescence mechanisms and luminescence quenching explore. It is found that due to the temperature quenching the room temperature yield is decreased in order of magnitude even for heavy Eu doped CsI crystals. Intense low temperature luminescence band at 441–448 nm connected with Eu2+ 4f6 5d → 4f7 radiative transition is observed. The results obtained show that the excitonic mechanism plays the main role in energy transfer process to Eu2+ ions and this is the reason for relatively low light yield of this emission at RT. The nature of the additional emission bands (410, 450, 480 and 500 nm) are apparently caused by the significant non-isomorphism of cations and/or by the presence of oxygen-containing admixtures. |
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