Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode |
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| Authors: | Cheng CH Pan HC Yang HJ Hsiao CN Chou CP McAlister SP Chin A |
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| Affiliation: | Nat. Chiao-Tung Univ., Hsinchu; |
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| Abstract: | We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10-7 A/cm2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset. |
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