DC and RF performance of 0.25 μm p-type SiGe MODFET |
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Authors: | Arafa M. Fay P. Ismail K. Chu J.O. Meyerson B.S. Adesida I. |
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Affiliation: | Coordinated Sci. Lab., Illinois Univ., Urbana, IL ; |
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Abstract: | The DC and RF performance of a 0.25 μm gate-length p-type SiGe modulation-doped field-effect transistor (MODFET) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7Ge0.3 buffer on a Si substrate. The combination of high-hole mobility, low-gate leakage current, and improved ohmic contact metallization results in an enhancement of the DC and RF performance. A maximum extrinsic transconductance (g(mext)) of 230 mS/mm was measured. A unity current gain cut-off frequency (fT) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices |
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