MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes |
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| Authors: | D A Vinokurov V A Kapitonov D N Nikolaev A L Stankevich A V Lyutetskii N A Pikhtin S O Slipchenko Z N Sokolova N V Fetisova I N Arsent’ev I S Tarasov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J th=100–200 A/cm2, internal optical loss αi=1.3–1.7 cm?1, and internal quantum efficiency ηi=60–70% have been fabricated. A CW output optical power of 5 W has been obtained for a single 100-µm-wide aperture mesa stripe laser diode emitting at 1.03 µm. It is shown that use of AlGaAs waveguide layers, which increase the conduction band barrier offset, lowers the temperature sensitivity of laser heterostructures within the temperature range 10–80°C. |
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