半导体异质结构中的谷间电子转移效应(英文)

Transferred Electron Effect Between Different Energy Valleys in Semiconductor Heterostructure

The transferred electron effect between different valleys in AlGaAs/ GaAs/AlGaAs heterostructure is studied using the one-band two-valley model in this paper. Taking the contributions from a varied electric field and the band offset and the coupling between different valleys at every heterojunction interface into account, the formulas for calculating the tunnelling probability and current are derived. The tunnelling probabilities and currents for various heterostructures, alloy components and electric fields have been calculated. The dependence of transferred electron effect on the heterojunction interface, the band structures of the well and barrier materials, and the electric field is discussed. The computed tunnelling current agrees with the experimental results, and so the effectiveness of this model in the researching of many-valley system is demonstrated. Furthermore, the difference between this transferred electron effect and the well known Gunn effect is pointed out and its application in the developing of semiconductor devices is discussed.