| Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile |
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| 作者姓名： | Guo Yufeng Zhang Bo Mao Ping Li Zhaoji and Liu Quanwang |
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| 作者单位： | 电子科技大学IC设计中心 成都610054
(郭宇锋，张波，毛平，李肇基)，电子科技大学IC设计中心 成都610054(刘全旺) |
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| 摘 要： | A unified breakdown model of SOI RESURF device with uniform,step，or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
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| 关 键 词： | 阶梯掺杂 线性掺杂 SOI RESURF 击穿模型 step doping profile linear doping profile SOI RESURF breakdown model 均匀 阶梯 线性掺杂 漂移区 RESURF 器件 统一 击穿模型 Device Breakdown Model Unified Step Doping Profile experiments numerical simulations availability good analytical results |
Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile |
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| Guo Yufeng,Zhang Bo,Mao Ping,Li Zhaoji,and Liu Quanwang.Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile[J].Chinese Journal of Semiconductors,2005,26(2):243-249. |
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| Authors: | Guo Yufeng Zhang Bo Mao Ping Li Zhaoji Liu Quanwang |
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| Abstract: | A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments. |
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| Keywords: | step doping profile linear doping profile SOI RESURF breakdown model |
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