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氧化铝缓冲层对ZnO薄膜性质的影响
引用本文:王新,向嵘,陈立,姜德龙,李野,王国政.氧化铝缓冲层对ZnO薄膜性质的影响[J].长春理工大学学报,2009,32(3):407-409.
作者姓名:王新  向嵘  陈立  姜德龙  李野  王国政
作者单位:长春理工大学,理学院,长春,130022 
基金项目:吉林省科技发展计划资助项目 
摘    要:采用反应磁控溅射的方法在石英衬底上制备了一层AI2O3薄膜,并将其作为后续ZnO薄膜生长的缓冲层.然后,采用反应磁控溅射的方法在AI2O3缓冲层上制备了ZnO薄膜.对比研究了引入Al2O3缓冲层前后,ZnO薄膜的结构和光学特性.通过引入Al2O3缓冲层,发现ZnO薄膜样品的(002)方向X射线衍射峰的半峰宽(FWHM)明显减小,光致发光谱中与缺陷相关的可见发光峰强度明显减弱,吸收光谱中的吸收边变得更加陡峭.这些结果表明引入Al2Q3缓冲层后,ZnO薄膜的结构和光学特性得到了很大改善,为制备高质量ZnO薄膜提供了参考.

关 键 词:ZnO薄膜  AI2O3缓冲层  X射线衍射  发光光谱  吸收光谱

Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film
WANG Xin,XIANG Rong,CHEN Li,JIANG Delong,LI Ye,WANG Guozheng.Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film[J].Journal of Changchun University of Science and Technology,2009,32(3):407-409.
Authors:WANG Xin  XIANG Rong  CHEN Li  JIANG Delong  LI Ye  WANG Guozheng
Affiliation:WANG Xin,XIANG Rong,CHEN Li,JIANG Delong,LI Ye,WANG Guozheng(Changchun University of Science , Technology,Changchun 130022)
Abstract:Firstly,a layer of Al2O3 thin film was grown on quartz substrate by reactive radio-frequency magnetron sputter-ing method,this Al2O3 thin film can be using as the buffer layer for the following growth of ZnO thin film,and then ZnO thin films were grown on the Al2O3 buffer layer also by this method.The structure and optical properties of ZnO thin films with and without the Al2O3 buffer layer were mainly investigated.By growing the Al2O3 buffer layer,the full-width at the half maximum of(002) diffraction peak...
Keywords:ZnO thin film  Al2O3 buffer layer  x-ray diffraction  photoluminescence spectrum  absorption spectrum  
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