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低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷界面缺陷态研究
引用本文:曹明贺,袁俊,周东祥,龚树萍.低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷界面缺陷态研究[J].无机材料学报,2003,18(6):1235-1239.
作者姓名:曹明贺  袁俊  周东祥  龚树萍
作者单位:[1]清华大学材料科学与工程系,北京100084 [2]华中科技大学电子科学与工程系,武汉430074
基金项目:“国家 863”项目(715-006-0080),中国博士后基金
摘    要:用TEM和EDS相结合的测试手段,研究了低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷材料的界面元素分布。根据界面元素分布的情况,对低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷界面可能存在的缺陷态进行分析,认为在低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷界面上主要存在以下缺陷结构:Mn“Ti,Mn‘Ti或Al‘Ti,V”Ba。

关 键 词:低室温电阻率  PTCR陶瓷  晶界  缺陷结构
文章编号:1000-324X(2003)06-1235-05
收稿时间:2002-10-8
修稿时间:2002年10月8日

Defect State in Grain Boundary of Ba0.92Ca0.08Ti1.02O3 Ceramics with Low Room Temperature Resistivity
CAO Ming-He,YUAN Jun,ZHOU Dong-Xiang,GONG Shu-Ping.Defect State in Grain Boundary of Ba0.92Ca0.08Ti1.02O3 Ceramics with Low Room Temperature Resistivity[J].Journal of Inorganic Materials,2003,18(6):1235-1239.
Authors:CAO Ming-He  YUAN Jun  ZHOU Dong-Xiang  GONG Shu-Ping
Affiliation:1.DepartmentofMaterialsScienceandEngineering;TsinghuaUniversity;Beijing100084;China;2.DepartmentofelectricalScienceandTechnology;HuazhongUniversityofScienceandTechnology;Wuhan430074;China
Abstract:The distribution of elements on the grain boundaries of Ba0.92Ca0.08Ti1.02O3 ceramics with low room temperature resistivity was studied by TEM combined with EDS. The point defects in the grain boundaries were also analyzed. The results show that the point defects in the grain boudaries of Ba0.92Ca0.08Ti1.02O3 ceramics with low room temperature resistivity mainly include Mn"Ti, Mn'Ti or Al'Ti, and V"Ba.
Keywords:low room temperature resistivity  PTCR ceramics  grain boundary  defect structure  
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