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Cr掺杂半导体CdTe的半金属铁磁性研究
引用本文:陈志远,高国营.Cr掺杂半导体CdTe的半金属铁磁性研究[J].材料导报,2006,20(12):119-120,123.
作者姓名:陈志远  高国营
作者单位:1. 咸宁学院物理系,咸宁,437005;华中科技大学物理系,武汉,430074
2. 华中科技大学物理系,武汉,430074
基金项目:国家自然科学基金,湖北省武汉市青年科技晨光计划
摘    要:采用基于密度泛函理论(DFT)的平面波赝势(PWPP)方法和全势线性缀加平面波(FPLAPW)方法研究了Cr掺杂半导体CdTe的电子结构和磁性.通过对自旋极化的态密度、磁矩以及铁磁态和反铁磁态的总能量的分析,理论预测到Cr掺杂半导体CdTe是一个半金属铁磁体,其在半导体自旋电子学中应该有一定的应用.

关 键 词:半金属铁磁体  密度泛函理论  电子结构

Study on the Half-metallic Ferromagnetism of Cr-doped Semiconductor CdTe
CHEN Zhiyuan,GAO Guoying.Study on the Half-metallic Ferromagnetism of Cr-doped Semiconductor CdTe[J].Materials Review,2006,20(12):119-120,123.
Authors:CHEN Zhiyuan  GAO Guoying
Affiliation:1. Department of Physics, Xianning College,Xianning 437005 ; 2.Department of Physics, Huazhong University of Science and Technology,Wuhan 430074
Abstract:The electronic structure and the magnetism of Crdoped semiconductor CdTe are studied by the phane-wave pseudopotential method and the full-potential linearized augmented plane-wave method based on the density functional theory. Spin-polarized density of states, magnetic moment and total energy in the ferromagnetic and antiferromagnetic states are calculated. The calculations indicate that Cr doped semiconductor CdTe is a half-metallic ferromagnet,and therefore Crdoped CdTe should be useful in semiconductor spintronics.
Keywords:half-metallic ferromagnet  DFT  electronic structure
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