| 掺Pt的SnO2薄膜气敏特性研究 |
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| 引用本文： | 白振华,潘国峰,孙以材,张效玮. 掺Pt的SnO2薄膜气敏特性研究[J]. 传感器世界, 2008, 14(3): 14-18 |
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| 作者姓名： | 白振华 潘国峰 孙以材 张效玮 |
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| 作者单位： | 河北工业大学微电子研究所,300130;河北工业大学信息工程学院 |
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| 摘 要： | 用直流磁控溅射法分别在si（111）基片及陶瓷基片上制备掺有Pt的Sn02薄膜，并进行500℃～700℃退火处理，对掺杂前后的薄膜进行XRD分析，测试各掺杂样品气敏特性。500℃退火后，掺杂样品对各种有机气体有较高的灵敏度，随着溅射时间的延长，气敏特性提高。700℃退火后，45min溅射的样品对氨气有很高的灵敏度和很好的选择性，最佳工作温度为220℃左右。随着掺杂时间延长，气敏特性降低。
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| 关 键 词： | SnO2薄膜 磁控溅射 气敏特性 灵敏度 |
| 文章编号： | 1006-883(2008)03-0014-05 |
Investigation on Gas Sensing Properties of SnO2 Thin Films Doped With Pt |
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| Abstract: | Thin films SnO2 doped with Pt were prepared by DC magnetron sputtering on Si （lll） wafers and ceramic tubes. Afterwards, annealing was carded out respectively at 500℃ and 700℃. The structure was studied by XRD and the sensing properties were tested , the samples showed higher sensitivitytowards the organic vapor after 500℃ annealing. After 700℃ annealing, the samples with 45 minutes Pt-doping showed excellent selectivity and high sensitivity only towards ammonia vapor . The best operating temperature is 220℃. The sensing properties decreased with the doping time beyond 45 minutes. |
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| Keywords: | Sn02 thin films doped sputter sensing properties sensitivity |
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