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A non-quasi-static small-signal model for metal-semiconductor junction diodes
Authors:J J Liou  K Lee  S M Knapp  K B Sundaram  J S Yuan  D C Malocha and M Belkerdid
Affiliation:

Electrical Engineering Department, University of Central Florida, Orlando, FL 32816, U.S.A.

Abstract:The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al---Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.
Keywords:
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