A non-quasi-static small-signal model for metal-semiconductor junction diodes |
| |
Authors: | J J Liou K Lee S M Knapp K B Sundaram J S Yuan D C Malocha and M Belkerdid |
| |
Affiliation: | Electrical Engineering Department, University of Central Florida, Orlando, FL 32816, U.S.A. |
| |
Abstract: | The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al---Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|