A non-quasi-static small-signal model for metal-semiconductor junction diodes |
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Authors: | J. J. Liou K. Lee S. M. Knapp K. B. Sundaram J. S. Yuan D. C. Malocha M. Belkerdid |
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Affiliation: | Electrical Engineering Department, University of Central Florida, Orlando, FL 32816, U.S.A. |
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Abstract: | The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al---Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high. |
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