Wordline voltage generating system for low-power low-voltage flashmemories |
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Authors: | Tanzawa T. Umezawa A. Kuriyama M. Taura T. Banba H. Miyaba T. Shiga H. Takano Y. Atsumi S. |
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Affiliation: | Toshiba Corp., Yokohama; |
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Abstract: | A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-μm flash memory process and achieved with very low stand-by current of 2 μA typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed |
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