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Wordline voltage generating system for low-power low-voltage flashmemories
Authors:Tanzawa   T. Umezawa   A. Kuriyama   M. Taura   T. Banba   H. Miyaba   T. Shiga   H. Takano   Y. Atsumi   S.
Affiliation:Toshiba Corp., Yokohama;
Abstract:A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-μm flash memory process and achieved with very low stand-by current of 2 μA typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed
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