0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

In this letter, ultrathin gadolinium oxide$(hboxGd_2hboxO_3)$high-$k$gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a$hboxGd_2hboxO_3$thickness of 3.1 nm yield a capacitance equivalent oxide thickness of$ CET = hbox0.86 hboxnm$. The extracted dielectric constant is$k = hbox13-hbox14$. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.