| AlxGa1-xN/GaN肖特基二极管的高温特性 |
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| 引用本文： | 张小玲,李菲,吕长志,谢雪松,李英,Mohammad S N.AlxGa1-xN/GaN肖特基二极管的高温特性[J].半导体学报,2009,30(3):034001-7. |
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| 作者姓名： | 张小玲 李菲 吕长志 谢雪松 李英 Mohammad S N |
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| 作者单位： | Department;Electronic;Information;Control;Engineering;Beijing;University;Technology;Mechanical;Electrical;Shougang;Institute;Computer;Howard; |
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| 摘 要： | High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface, the AlxGal-xN/GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes. For the AlxGa1-xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AlxGa1-xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse breakdown voltage are superior for the AlxGa1-xN/GaN diodes to those for the AlxGa1-xN diodes.
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| 关 键 词： | 肖特基二极管 温度特性 反向击穿电压 反向漏电流 电流电压 电容电压 压电极化 显示性能 |
| 收稿时间： | 5/4/2008 2:35:11 PM |
| 修稿时间： | 11/4/2008 3:03:16 PM |
High-temperature characteristics of AlxGa1 xN/GaN Schottky diodes |
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| Zhang Xiaoling,Li Fei,Lu Changzhi,Xie Xuesong,Li Ying and Mohammad S N.High-temperature characteristics of AlxGa1 xN/GaN Schottky diodes[J].Chinese Journal of Semiconductors,2009,30(3):034001-7. |
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| Authors: | Zhang Xiaoling Li Fei Lu Changzhi Xie Xuesong Li Ying and Mohammad S N |
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| Affiliation: | Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;Department of Mechanical and Electrical Engineering, Shougang Institute of Technology, Beijing 100041, China;Department of Electrical & Computer Engineering, Howard University, Washington, DC 20059, USA |
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| Abstract: | Schottky diodes AlGaN/GaN high-temperature |
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| Keywords: | Schottky diodes AlGaN/ GaN high-temperature |
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