| nBn红外探测器研究进展 |
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| 引用本文： | 石倩,张书魁,王建禄,褚君浩.nBn红外探测器研究进展[J].红外与毫米波学报,2022,41(1):139-150. |
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| 作者姓名： | 石倩 张书魁 王建禄 褚君浩 |
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| 作者单位： | 中国科学院上海光学精密机械研究所,上海201800;中国科学院大学杭州高等研究院物理与光电工程学院,浙江杭州310024;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083,中国科学院大学杭州高等研究院物理与光电工程学院,浙江杭州310024;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083,中国科学院大学杭州高等研究院物理与光电工程学院,浙江杭州310024;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;复旦大学光电研究院上海市智能光电与感知前沿科学研究基地,上海200433;复旦大学芯片与系统前沿技术研究院上海200433,中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;复旦大学光电研究院上海市智能光电与感知前沿科学研究基地,上海200433 |
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| 基金项目： | “十四五”国家重点研发计划(2021YFA1200700),国家自然科学基金 (Grant Nos. 62025405 and 61835012),中国科学院战略性先导科技专项(Grant No. XDB44000000),上海市科委科技基金(Grant No. 2151103500). |
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| 摘 要： | nBn红外探测器旨在消除肖特基-里德-霍尔产生复合电流,这将有效降低器件的暗电流并提高工作温度.由于制造工艺的兼容性和晶格匹配的衬底的存在,基于III-V化合物(包括二类超晶格材料)的nBn红外探测器得到了快速发展.通过理论模拟,基于HgCdTe材料的nBn红外探测器也能有效抑制暗电流.然而,去除价带势垒的困难阻碍了H...
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| 关 键 词： | nBn红外探测器 Sb基III-V族半导体 二类超晶格 碲镉汞 |
| 收稿时间： | 2021/12/26 0:00:00 |
| 修稿时间： | 2022/1/10 0:00:00 |
Progress on nBn infrared detectors |
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| SHI Qian,ZHANG Shu-Kui,WANG Jian-Lu and CHU Jun-Hao.Progress on nBn infrared detectors[J].Journal of Infrared and Millimeter Waves,2022,41(1):139-150. |
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| Authors: | SHI Qian ZHANG Shu-Kui WANG Jian-Lu and CHU Jun-Hao |
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| Affiliation: | (Shanghai Institute Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Institute of Optoelectronics,Shanghai Frontier Base of Intelligent Optoelectronics and Perception,Fudan University,Shanghai 200433,China;Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China) |
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| Abstract: | The nBn infrared(IR)detector is designed to eliminate the Shockley-Read-Hall(SRH)generation-re?combination(G-R)currents,which will effectively reduce the dark current and increase the operating temperature of the detector.Due to the compatibility of the manufacturing process and the existence of a substrate with a per?fectly matched lattice,the nBn infrared detectors based on III?V compounds including type?II superlattice(T2SLs)materials have been developed rapidly.Through theoretical simulation,the nBn infrared detector based on the HgCdTe material system can also effectively suppress the dark current.However,the difficulty of remov?ing the valence band barrier hinders HgCdTe nBn infrared detector development.This review will elaborate on the physical mechanism of nBn detectors to suppress dark current,and then introduce the development status and de?velopment trend of nBn barrier detectors in different semiconductor materials. |
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| Keywords: | nBn infrared detector Sb-based III-V semiconductor type-II superlattice HgCdTe |
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