首页 | 本学科首页   官方微博 | 高级检索  
     


Modeling the effect of damage on electrical resistivity of melt-infiltrated SiC/SiC composites
Authors:Roy M Sullivan  Eric H Baker  Craig E Smith  Gregory N Morscher
Affiliation:1. Materials and Structures Division, NASA Glenn Research Center, Mail Stop 49-7, 21000 Brookpark Road, Cleveland, OH 44135, USA;2. Connecticut Reserve Technologies, Inc., Mail Stop 49-7, 21000 Brookpark Road, Cleveland, OH 44135, USA;3. Materials and Structures Division, NASA Glenn Research Center, Mail Stop 106-5, 21000 Brookpark Road, Cleveland, OH 44135, USA;4. Department of Mechanical Engineering, 302 Buchtel Common, Auburn Science & Engineering Center, University of Akron, Akron, OH 44325, USA
Abstract:Electrical resistivity (ER) measurements are a possible health monitoring technique for ceramic matrix composite components in future aerospace applications. In order to use ER measurements to detect and identify damage, it is necessary to understand how each specific damage state will affect the ER response. In this study, finite element models are developed and applied to quantify the effect of specific damage states on the ER response in a melt-infiltrated silicon carbide (SiC) fiber-reinforced SiC composite. The ER of several damage states are calculated by simulating the electric current flow through the damaged microstructure. This is achieved by performing the numerical solution of the steady-state conservation of charge density equation. Numerical results reveal the effect of various cracking features on the ER response such as type of cracking, extent of cracking, crack density and fiber/matrix debonding.
Keywords:Melt infiltrated SiC/SiC composites  Electrical resistivity  Finite element analysis  Composite damage  Electric current flow
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号