Enhancement of piezoelectric and ferroelectric performances in (Na0.85K0.15)0.5Bi0.5TiO3 films with BaTiO3 interlayers |
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Authors: | Yunyi Wu Xiaohui Wang Caifu Zhong Longtu Li |
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Affiliation: | 1. Department of Energy Materials and Technology, General Research Institute for Nonferrous Metals, Beijing, China;2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;3. College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China |
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Abstract: | In this work, in order to optimize the electrical performance of (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) thin films, 20 nm-thick BaTiO3 (BTO) layer was utilized by deliberately coating in the NKBT film-substrate interface or in the NKBT film, i.e., BTO layers coated in sequence with NBKT layers. The BTO layer, especial coated in the NKBT film, was beneficial for crystallization process and more preferable to form a denser film morphology. The BTO-coated NKBT composite films exhibited much enhancement in electrical properties compared to the films without BTO layer. Accordingly, a high effective piezoelectric coefficient d33* of 75 pm/V and remnant polarization Pr of 22.1 μC/cm2, as well as a low leakage current density of 1.2 × 10?5 A/cm2 were obtained in the 460 nm-thick composite film with BTO layers coated in the NBKT film. It meant that this kind of BTO-coated NKBT composite film could perform as a potential candidate for the lead-free piezoelectric applications. The observed enhancement in the electrical properties with the introduction of BTO layer could be mainly explained by the weakened influence of domain pinning in the film-electrode interface and grain boundaries due to the decreased strain in the film-electrode interface and better crystallinity in the highly (110)-oriented NKBT films, thereby enhancing motion of domain-walls. |
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Keywords: | NKBT Composite film BTO Electrical properties |
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