Low-temperature sintering and microwave dielectric properties of B2O3-added ZnO-deficient Zn2GeO4 ceramics for advanced substrate application

ZnO-deficient Zn_2-xGeO_4-x ceramics with 0.05?≤?x?≤?0.15 were synthesized because a ZnO secondary phase is formed in the stoichiometric Zn₂GeO₄ ceramics synthesized using micrometer-sized ZnO and GeO₂ powders. The Zn_1.9GeO_3.9 ceramic sintered at 1000?°C showed a homogeneous Zn₂GeO₄ phase with good microwave dielectric properties: ε_r of 6.8, Q?×?f of 49,000?GHz, and τ_f of ?16.7?ppm/°C. However, its sintering temperature was still too high for it to be used as an advanced substrate for low-temperature co-fired ceramic devices. Therefore, various amounts of B₂O₃ were added to the Zn_1.9GeO_3.9 ceramics to reduce their sintering temperature. Owing to the formation of a B₂O₃-GeO₂ liquid phase, these ceramics were well sintered at low temperatures between 925?°C and 950?°C. In particular, 15?mol% B₂O₃-added Zn_1.9GeO_3.9 ceramic sintered at 950?°C showed promising microwave dielectric properties for advanced substrates without the reaction with an Ag electrode: ε_r?=?6.9, Q?×?f?=?79,000?GHz, and τ_f?=??15?ppm/°C.