Gamma-induced defects in BaFI crystals

We have studied gamma-induced defects in BaFI crystals. To gain insight into the origin of the observed induced absorption bands, we analyzed the dose dependence of the concentration of color centers. The results lead us to assign the 205-nm absorption band to α(F⁻) centers, the 270-nm band to F_i⁰ centers, the 370-nm band to I_i⁰ centers, the bands around 480 nm to F(F⁻) centers, and the 610-nm band to F(I⁻) centers.