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基于物理的IGCT电路模型参数提取方法
引用本文:王佳蕊,孔力,周亚星,肖浩,李鲁阳,祁晓敏. 基于物理的IGCT电路模型参数提取方法[J]. 电工电能新技术, 2017, 36(7). DOI: 10.12067/ATEEE1611072
作者姓名:王佳蕊  孔力  周亚星  肖浩  李鲁阳  祁晓敏
作者单位:1. 中国科学院电工研究所, 北京 100190;中国科学院大学, 北京 100049;2. 中国科学院电工研究所,北京,100190
摘    要:随着集成门极换流晶闸管(IGCT)在大功率电力电子装置的大范围推广,相应的高精度仿真研究必不可少,IGCT模型特别是具有较高精度的基于物理的IGCT电路仿真模型将发挥更加重要的作用。本文充分考虑了IGCT结构特点及其运行特性对参数提取的影响,结合理论分析、实验提取、实物测量及经验估算,在已有参数提取方法的基础上,提出了一种适用于基于改进型傅里叶级数法的IGCT电路模型的参数提取方法。搭建了具备感性负载的箝位电路测试平台,用于参数提取及提取方法验证,将采用本文方法提取的模型参数用于上述IGCT电路模型,进行电路仿真分析,所得IGCT模型仿真结果与实验结果高度拟合,验证了本文参数提取方法的正确性。

关 键 词:集成门极换流晶闸管  改进型傅里叶级数法  电路模型  参数提取

Parameter extraction method of IGCT circuit model based on physics
WANG Jia-rui,KONG Li,ZHOU Ya-xing,XIAO Hao,LI Lu-yang,QI Xiao-min. Parameter extraction method of IGCT circuit model based on physics[J]. Advanced Technology of Electrical Engineering and Energy, 2017, 36(7). DOI: 10.12067/ATEEE1611072
Authors:WANG Jia-rui  KONG Li  ZHOU Ya-xing  XIAO Hao  LI Lu-yang  QI Xiao-min
Abstract:With the large-scale applications of integrated gate commutated thyristors (IGCTs) in high-power power electronic devices, the corresponding high precision simulation researches are indispensable and IGCTs models, especially the physics-based circuit simulator models with higher precision, will play a more important role.Combined with the theoretical analyses, experimental extractions, physical measurements, and empirical estimations, and based on the existing method, this paper proposed a parameter extraction methodology for the IGCT circuit model established by the improved Fourier series method, which adequately considered IGCTs'' structure characteristics and the impacts of operating characteristics on the parameter extraction.A clamped circuit testing platform with inductive load was established in order to extract parameters and to verify the extraction method.The parameters extracted through the proposed method were applied in the simulated analyses of the IGCT circuit model.The correctness of the proposed method in this paper was verified through the better fittings of the simulation results and test results.
Keywords:integrated gate commutated thyristor (IGCT)  improved fourier series method  circuit model  parameter extraction
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