| Arc-Discharge Synthesis and Microstructure Characterization of AIN Nanowires |
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| 引用本文： | Zhijie LI Zhiqi SHEN Fu WANG Lianlong HE. Arc-Discharge Synthesis and Microstructure Characterization of AIN Nanowires[J]. 材料科学技术学报, 2006, 22(1): 113-116 |
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| 作者姓名： | Zhijie LI Zhiqi SHEN Fu WANG Lianlong HE |
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| 作者单位： | [1]Shenyang National Laboratory of Materials Science, Institute of Metal Research, Chinese Academy of Sciences,Shenyang 110016, China [2]Laboratory of Ultra-fine Particle, Shenyang University of Technology, Shenyang 110023, China [3]School of Materials and Metallurgy, Northeastern University, Shenyang 110004, China |
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| 基金项目： | This work was supported by the National Natural Science Foundation of China under grant No. 50171068. |
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| 摘 要： | AIN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AIN nanowires were of various shapes. Their diameters ranged from 20 to 110 nm and the lengths were up to 20 μm. Most of the AIN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an AI droplet formed on the top of as-grown AIN nanowire played a role of catalyst.
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| 关 键 词： | 氮化铝纳米线 纳米材料 微观结构 电弧放电 高分辨率透射电子显微镜 |
| 收稿时间： | 2005-03-16 |
Arc-Discharge Synthesis and Microstructure Characterizationof AlN Nanowires |
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| Zhijie LI,Zhiqi SHEN,Fu WANG,Lianlong HE. Arc-Discharge Synthesis and Microstructure Characterizationof AlN Nanowires[J]. Journal of Materials Science & Technology, 2006, 22(1): 113-116 |
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| Authors: | Zhijie LI Zhiqi SHEN Fu WANG Lianlong HE |
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| Affiliation: | Shenyang National Laboratory of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China... |
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| Abstract: | AlN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AlN nanowires were of various shapes. Their diameters ranged from 20 to 110~nm and the lengths were up to 20μm. Most of the AlN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an Al droplet formed on the top of as-grown AlN nanowire played a role of catalyst. |
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| Keywords: | Arc-discharge Nanowire High-resolution transmission electron microscope(HRTEM) |
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