Influence of Sintering Temperature on Intrinsic Trapping in Zinc Oxide-Based Varistors

The ac electrical data of the ZnO-Bi₂O₃ varistor system, in the frequency range 5 Hz to 13 MHz, when analyzed in the complex capacitance ( C *) plane, yields a distinct depressed semicircular relaxation having an average time constant on the order of 10⁻⁶ s. This trapping is attributed to the possible formation of ionized intrinsic/native defects. The decrease in the depression angle and average relaxation time, monitored as a function of the increasing sintering temperature (≥1100°C), indicated an improvement in the degree of uniformity in the loss-conductance and rapidity of response of the intrinsic trapping. The dependence of the ac parameters related to this trapping response obtained from the C * plane on the sintering temperature has been presented.