| 毫米波片上雷达技术研究进展 |
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| 引用本文： | 李骏,王健安,赖凡.毫米波片上雷达技术研究进展[J].微电子学,2019,49(4):545-550. |
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| 作者姓名： | 李骏 王健安 赖凡 |
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| 作者单位： | 中国电子科技集团公司 第二十四研究所, 重庆 400060,模拟集成电路国家重点实验室, 重庆 400060,中国电子科技集团公司 第二十四研究所, 重庆 400060 |
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| 基金项目： | 模拟集成电路国家重点实验室基金资助项目(614280205040617) |
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| 摘 要： | 硅微电子技术的进步推动着雷达技术向着毫米波频段片上方向发展。片上雷达优良的性能和小型化优势使其在汽车及其他新领域获得越来越广泛的应用。阐述了基于SiGe BiCMOS和CMOS技术研制的几种主流硅毫米波片上雷达的电路结构、无源元件和封装技术,分析了其发展情况和面临的挑战,指出了片上毫米波雷达技术和应用的发展趋势。
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| 关 键 词： | 毫米波 片上雷达 SiGe BiCMOS CMOS 收发器 天线 |
| 收稿时间： | 2019/4/17 0:00:00 |
Research Status of Millimeter Wave on-Board Radar Technology |
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| Affiliation: | The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, P.R.China,Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P.R.China and The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, P.R.China |
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| Abstract: | Advances in silicon microelectronics technology had driven radar technologies to the orientation of on-chip radar in the millimeter-wave range. The excellent performance and miniaturization of on-chip radar had made it more and more widely be used in automobile and other new fields. The circuit structure, passive components and package technology of several main silicon millimeter wave on-chip radars based on SiGe BiCMOS and CMOS process were analyzed. The development situation and challenges were analyzed, and the development trends of on-chip millimeter wave radar technology and application were pointed out. |
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