| 双极晶体管发射极电阻的提取方法及应用研究 |
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| 引用本文： | 邱盛,王文捷,王健安,张培健.双极晶体管发射极电阻的提取方法及应用研究[J].微电子学,2019,49(2):164-167. |
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| 作者姓名： | 邱盛 王文捷 王健安 张培健 |
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| 作者单位： | 中国电子科技集团公司 第二十四研究所, 重庆 400060,中国电子科技集团公司 第二十四研究所, 重庆 400060,模拟集成电路国家重点实验室, 重庆 400060,模拟集成电路国家重点实验室, 重庆 400060 |
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| 摘 要： | 以双多晶自对准互补双极器件中NPN双极晶体管为例,阐述了发射极电阻提取的基本原理和数学方法。在大电流情况下,NPN管的基极电流偏离理想电流是发射极串联电阻效应引起的。该提取方法综合考虑了辐照过程中NPN管的电流增益退化特性,分析了总剂量辐照效应对NPN管的损伤机理和模式。该提取方法适用于多晶硅发射极器件,也适用于SiGe HBT器件。
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| 关 键 词： | 多晶硅发射极 发射极电阻 总剂量辐照 电流增益退化 |
Extraction Method and Application of Emitter Resistance in Bipolar Transistors |
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| Affiliation: | The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, P.R.China,The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, P.R.China,Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P.R.China and Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P.R.China |
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| Abstract: | As an example, the basic principles and mathematical methods of emitter resistance extraction in double polysilicon self-aglined complementary NPN bipolar transistors were illustrated. At high current level, the deviation of the base current from the ideal behavior was caused by the effect of series resistance. In the proposed method, the current gain degradation characteristics was considered comprehensively after the total dose irradiation in NPN transistors and the damage modes and mechanisms of total dose irradiation in NPN transistors were revealed. This emitter resistance extraction method not only applied to polysilicon emitter transistors, but also was suitable for SiGe HBTs. |
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