| 超深亚微米n沟道Si-MOSFET中栅介质的击穿 |
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| 引用本文： | 李青龙. 超深亚微米n沟道Si-MOSFET中栅介质的击穿[J]. 常州工学院学报, 2005, 18(3): 19-22 |
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| 作者姓名： | 李青龙 |
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| 作者单位： | 常州工学院电子信息与电气工程学院,江苏,常州,213002 |
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| 摘 要： | 通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0.5V和1.0V时,增大栅极电压到18V时,栅氧化层(3nm)被永久性击穿;而在栅、源、漏偏压分别为5V、0.5V、1.0V不变时,减薄栅氧化层到0.335nm时,栅氧化层被永久性击穿。
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| 关 键 词： | 超深亚微米 Si-MOSFET 栅介质 击穿 |
| 文章编号： | 1671-0436(2005)03-0019-04 |
| 修稿时间： | 2005-03-16 |
Gate Dielectric Breakdown of Very-Deep Sub-micron n-channel Si-MOSFET |
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| LI Qing-long. Gate Dielectric Breakdown of Very-Deep Sub-micron n-channel Si-MOSFET[J]. Journal of Changzhou Institute of Technology, 2005, 18(3): 19-22 |
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| Authors: | LI Qing-long |
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| Abstract: | In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide. It can be concluded that the gate dielectric is broken when the source voltage is 0.5V, the drain voltage is 1.0V and the gate voltage increases to 18V. When the gate voltage, the source voltage, the drain voltage are 5V, 0.5V,and 1.0V respectively, the thickness of the gate oxide decreases to 0.335nm. |
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| Keywords: | Si-MOSFET |
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